MOSFET, 1 elem/chip, 12 A, 650 V, 4-tüskés, Power88 Egyszeres

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.700 V @ TJ = 150 oC Leadless Ultra-thin SMD package Kelvin contact Ultra Low Gate Charge (Typ. Qg = 24 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF) Optimized Capacitance Typ. RDS(on) = 210 mΩ Moisture Sensitivity Level 1 guarantee Internal Gate Resistance: 0.5 Ω Benefits: Higher system reliability at low temperature operation High power density Low gate noise and switching loss Low switching loss Low switching loss Lower peak Vds and lower Vgs oscillation Applications: Computing Telecommunication Industrial End Products: Telecom / Server Adapter LED Lighting